Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 8, 2005, Pages 1607-1610

  Hung, S C ^a   Su, Y K ^a   Chang, S J ^a   Chen, S C ^b   Ji, L W ^c   Fang, T H ^d   Tu, L W ^e   Chen, M ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

^d SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^e NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DISLOCATIONS (CRYSTALS); FIELD EFFECT TRANSISTORS; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; NANOTECHNOLOGY; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY; THERMODYNAMIC STABILITY;

NANOCOLUMNS; NANOMASKS; SUBSTRATE SURFACES; ULTRAVIOLET PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 17444430876     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-005-3219-z     Document Type: Article

References (43)

1. J.I. Pankove, S. Bloom, G. Harbeke; RCA Rev. 36, 163 (1975)
2. J.I. Pankove; MRS Symp. Proc. 162, 515 (1990)
3. P. Das, D.K. Ferry: Solid State Electron. 19, 76 (1976)
4. S. Nakamura, M. Senoh, T. Mukai: Appl. Phys. Lett. 64, 1687 (1994)
5. H. Morkoc, S.N. Mohammad: Science 267, 51 (1995)
6. S. Nakamura: Science 281, 956 (1998)
7. Z.G. Bai, D.P. Yu, H.Z. Zhang, Y. Ding, Y.P. Wang, X.Z. Gai, Q.L. Hang, G.C. Xiong, S.Q. Feng: Chem. Phys. Lett. 303, 311 (1999)
8. C.R. Martin: Acc. Chem. Res. 28, 61 (1995)
9. J.C. Hulteen, C.R. Martin: J. Chem. Mater. 7, 1075 (1997)
10. D. Routkevitch, T. Bigioni, M. Moskovits, J.M. Xu: J. Phys. Chem. 100, 14037 (1996)
11. D. Xu, Y. Xu, D. Chen, G. Guo, L. Gui, Y. Tang: Adv. Mater. 12, 520 (2000)
12. D. Routkevitch, T.L. Haslett, L. Ryan, T. Bigioni, C. Douketis, M. Moskovits: Chem. Phys. 210, 343 (1996)
13. J.L. Hutchison, D. Routkevitch, M. Moskovits, R.R. Nayak: Inst. Phys. Conf. Ser. 157, 389 (1997)
14. J.S. Suh, J.S. Lee: Chem. Phys. Lett. 281, 384 (1997)
15. M.H. Huang, S. Mao, H. Feich, H.Q. Yan, Y.Y. Wu, H. Kind, E. Weber, R. Russo, P.D. Yang: Science 292, 1897 (2001)
16. D.P. Yu, Q.L. Hang, Y. Ding, H.Z. Zhang, Z.G. Bai, J.J. Wang, Y.H. Zou, W. Qian, G.C. Xiong, S.Q. Feng: Appl. Phys. Lett. 73, 3076 (1998)
17. C.B. Cao, X. Xiang, H.S. Zhu: J. Crystal Growth 273, 375 (2005)
18. S.K. Lee, H.J. Choi, P. Pauzauskie, P.D. Yang, N.K. Cho, H.D. Park, E.K. Suh, K.Y. Lim, H.J. Lee: Phys. Stat. Solidi B 241, 2775 (2004)
19. B. Gates, Y.Y. Wu, Y.D. Yin, P.D. Yang, Y.N. Xia: J. Am. Chem. Soc. 123, 11 500 (2001)
20. S.M. Zhou, X.H. Zhang, X.M. Meng, X. Fan, K. Zou, S.K. Wu: Mater. Lett. 58, 3578 (2004)
21. J. Zhang, L.D. Zhang: J. Vacuum Sci. Technol. B 21, 2415 (2003)
22. M. Zhang, Y. Bando, K. Wada: J. Mater. Sci. 81, 167 (2001)
23. H. Nakamura, Y. Matsui: J. Am. Chem. Soc. 117, 2651 (1995)
24. N.C. Li, C.R. Martin: J. Electrochem. Soc. 148, A164 (2001)
25. H.Q. Cao, Y. Xu, J.M. Hong, H.B. Liu, G. Yin, B.L. Li, C.Y. Tie, Z. Xu: Adv. Mater. 13, 1393 (2001)
26. Y.K. Zhou, C.M. Shen, L.H. Li: Solid State Ionics 146, 81 (2002)
27. M. Zhang, Y. Bando, K. Wada: J. Mater. Res. 16, 1408 (2001)
28. G.S. Cheng, S.H. Chen, X.G. Zhu, Y.Q. Mao, L.D. Zhang: Mater. Sci. Eng. A 286, 165 (2000)
29. G.S. Cheng, L.D. Zhang, S.H. Chen, Y. Li, L. Li, X.G. Zhu, Y. Zhu, G.T. Fei, Y.Q. Mao: J. Mater. Res. 15, 137 (2000)
30. G.S. Cheng, L.D. Zhang, Y. Zhu, G.T. Fei, L. Li, C. Mo, Y.Q. Mao: Appl. Phys. Lett. 75, 2455 (1999)
31. C.C. Williams, R.C. Davis, P. Neuzil: U.S. Patent 5,969,345 (1999)
32. F.G. Tarntair, L.C. Chen, S.L. Wei, W.K. Hong, K.H. Chen, H.C. Cheng: J. Vac. Sci. Technol. B 18, 1207 (2000)
33. P.D. Kichambare, F.G. Tarntair, L.C. Chen, K.H. Chen, H.C. Cheng: J. Vac. Sci. Technol. B 18, 2722 (2000)
34. D.M. Tennant in Nanotechnology, ed. by G. Timp (Springer, New York 1999), Chap. 4
35. H. Yoshida, T. Urushido, H. Miyake, K. Hiramatsu: Jpn. J. Appl. Phys. 40, L1301 (2001)
36. C.C. Yu, C.F. Chu, J.Y. Tsai, H.W. Huang, T.H. Hsueh, C.F. Lin, S.C. Wang: Jpn. J. Appl. Phys. 41, L910 (2002)
37. S.J. Chang, W.C. Lai, Y.K. Su, J.F. Chen, C.H. Liu, U.H. Liaw: IEEE J. Sel. Top. Quantum Electron. 8, 278 (2002)
38. S.J. Chang, C.H. Chen, P.C. Chang, Y.K. Su, P.C. Chen, Y.D. Jhou, H. Hung, C.M. Wang, B.R. Huang: IEEE Trans. Electron Devices 50, 2567 (2003)
39. S.J. Chang, M.L. Lee, J.K. Sheu, W.C. Lai, Y.K. Su, C.S. Chang, C.J. Kao, G.C. Chi, J.M. Tsai: IEEE Electron Device Lett. 24, 212 (2003)
40. S.J. Chang, C.H. Kuo, Y.K. Su, L.W. Wu, J.K. Sheu, T.C. Wen, W.C. Lai, J.F. Chen, J.M. Tsai: IEEE J. Sel. Top. Quantum Electron. 8, 744 (2002)
41. S.J. Chang, C.S. Chang, Y.K. Su, R.W. Chuang, Y.C. Lin, S.C. Shei, H.M. Lo, H.Y. Lin, J.C. Ke: IEEE J. Quantum Electron. QE-39, 1439 (2003)
42. R.J. Shul, C.G. Willison, M.M. Bridges, J. Han, J.W. Lee, S.J. Pearton, C.R. Abernathy, J.D. Mackenzie, S.M. Donovan: Solid State Electron. 42, 2269 (1998)
43. S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren: J. Appl. Phys. 86, l (1999)