Fabrication and photoluminescence of ordered GaN nanowire arrays

Journal of Chemical Physics

Volumn 115, Issue 13, 2001, Pages 5714-5717

  Zhang, J ^a,b   Zhang, L D ^a   Wang, X F ^a   Liang, C H ^a   Peng, X S ^a   Wang, Y W ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b YANTAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

ANODIC ALUMINA MEMBRANE; CRYSTALLINE NANOWIRE; HEXAGONAL WURTZITE STRUCTURE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0035474761     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1407005     Document Type: Article

References (28)