Optimized electrical properties and chemical structures of SrTiO 3 thin films on Si using various interfacial barrier layers

Journal of the Electrochemical Society

Volumn 157, Issue 10, 2010, Pages

  Park, Tae Joo ^a   Kim, Jeong Hwan ^a   Jang, Jae Hyuck ^a   Lee, Joohwi ^a   Lee, Sang Woon ^a   Kim, Un Ki ^a   Seo, Minha ^a   Jung, Hyung Suk ^a   Lee, Sang Young ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CHEMICAL STRUCTURE; CRYSTALLINITIES; ELECTRICAL PROPERTY; INTERFACE LAYER; INTERFACIAL BARRIERS; INTERFACIAL REACTIONS; NITRIDED; SI DIFFUSION; SI SUBSTRATES; SILICATE PHASE; SRTIO;

DIELECTRIC PROPERTIES; DIFFUSION BARRIERS; DIFFUSION IN SOLIDS; HAFNIUM COMPOUNDS; PHASE INTERFACES; SILICATES; SILICON; STRONTIUM ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956194806     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3474233     Document Type: Article

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