Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2217-2221

  Choi, C ^a   Cartier, E ^a   Wang, Y Y ^b   Narayanan, V ^a   Khare, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

Band edge effective work function; EOT scaling; High gate dielectric

Indexed keywords

DEGRADATION; DIFFUSION; HYSTERESIS; LEAKAGE CURRENTS; MOS DEVICES; STRONTIUM COMPOUNDS;

BAND-EDGE EFFECTIVE WORK-FUNCTIONS; EOT SCALING; GATE LEAKAGE;

GATE DIELECTRICS;

EID: 34248642585     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.134     Document Type: Article

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