메뉴 건너뛰기




Volumn 24, Issue 6, 2004, Pages 1449-1453

Electrical properties of sputter deposited SrTiO3 gate dielectrics

Author keywords

Electrical properties; Films; Gate dielectric; SrTiO3

Indexed keywords

HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; NITROGEN; OXYGEN; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; SILICON; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS; THIN FILMS;

EID: 0942291203     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(03)00537-5     Document Type: Article
Times cited : (14)

References (8)
  • 5
    • 0036165638 scopus 로고    scopus 로고
    • Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique
    • Hong C.C. Chang C.Y. Lee C.Y. Hwu J.G. Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique IEEE Electron Device Lett. 23 2002 28-30
    • (2002) IEEE Electron Device Lett. , vol.23 , pp. 28-30
    • Hong, C.C.1    Chang, C.Y.2    Lee, C.Y.3    Hwu, J.G.4
  • 7
    • 0036715043 scopus 로고    scopus 로고
    • An improved two-frequency method of capacitance measurement for the high-k gate dielectrics
    • Lue H.T. Liu C.Y. Tseng T.Y. An improved two-frequency method of capacitance measurement for the high-k gate dielectrics IEEE Electron Device Lett. 23 2002 553-555
    • (2002) IEEE Electron Device Lett. , vol.23 , pp. 553-555
    • Lue, H.T.1    Liu, C.Y.2    Tseng, T.Y.3
  • 8
    • 85030900654 scopus 로고    scopus 로고
    • Berkeley Device Group [Online]. Available:
    • Berkeley Device Group [Online]. Available: www.device.eecs.berkeley.edu/qmcv/html.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.