C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1133-1136

  Passlack, M ^a,b   Hong, M ^a   Mannaerts, J P ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Phoenix Corporation Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAMS; EVAPORATION; MOLECULAR BEAM EPITAXY; MOS DEVICES; OXIDES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS;

CONDUCTANCE VOLTAGE; ELECTRON BEAM EVAPORATION; INTERFACE TRAP LOSS; INVERSION ACCUMULATION DEVICE; LOW INTERFACE STATE DENSITY; OXIDE FILMS; QUASI STATIC CAPACITANCE VOLTAGE; SURFACE PASSIVATION;

INTERFACES (MATERIALS);

EID: 0030216999     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00006-8     Document Type: Review

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