Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 615-623

  Zhang, L ^a   He, W ^a   Chan, D S H ^a   Cho, B J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; DIELECTRIC MATERIALS; HAFNIUM OXIDES; INTEGRATED CIRCUITS; LOW-K DIELECTRIC; METAL INSULATOR BOUNDARIES; MIM DEVICES; NITRIDES; SILICA; SILICON NITRIDE; TIMING CIRCUITS;

CAPACITANCE DENSITY; CUBIC STRUCTURE; CURRENT CHARACTERISTIC; HIGH DIELECTRIC CONSTANTS; KAPPA VALUES; METAL INSULATOR METAL CAPACITOR (MIM); MIM CAPACITORS; VOLTAGE LINEARITY;

LANTHANUM;

EID: 76549125666     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122120     Document Type: Conference Paper

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