SCOPUS 정보 검색 플랫폼

Volumn 518, Issue 19, 2010, Pages 5579-5584

Trapping properties of sputtered hafnium oxide films: Bulk traps vs. interface traps

(4) Verrelli, E a Galanopoulos, G a Zouboulis, I a Tsoukalas, D a

a NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

Author keywords

Bulk trap; Charge distribution; Charge retention; Electrical characterization; Hafnium oxide; High dielectric constant; Interface trap; Non volatile memory; Sputtering

Indexed keywords

BULK TRAPS; CHARGE RETENTION; ELECTRICAL CHARACTERIZATION; HIGH DIELECTRIC CONSTANTS; INTERFACE TRAPS; NON-VOLATILE MEMORIES;

CHARGE DISTRIBUTION; CHARGED PARTICLES; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; HYSTERESIS; OXIDES; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SILICON COMPOUNDS; SIZE DISTRIBUTION;

OXIDE FILMS;

EID: 77955655474 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.05.051 Document Type: Article

Times cited : (10)

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