Low-temperature ozone passivation for improving the quality of sputtered HfOx thin-film

Materials Letters

Volumn 63, Issue 22, 2009, Pages 1914-1916

  Chen, Shih Ching ^a   Chang, Ting Chang ^a,b   Su, Hsuan Hsiang ^a   Yang, Po Chun ^a   Lu, Jin ^a,c   Huang, Hui Chun ^a   Gan, Der Shin ^a   Ho, New Jin ^a,b   Shi, Yi ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NANJING UNIVERSITY   (China)

Author keywords

Hafnium oxide; High k dielectric; Ozone passivation

Indexed keywords

FLAT-BAND VOLTAGE SHIFT; HAFNIUM OXIDE; HIGH PRESSURE; HIGH-K DIELECTRIC; HYSTERESIS PHENOMENON; LOW TEMPERATURES; THIN-FILM DIELECTRICS; XPS;

BINDING ENERGY; DIELECTRIC FILMS; ELECTRIC POTENTIAL; HAFNIUM; HAFNIUM COMPOUNDS; OXIDES; OZONE; THIN FILM DEVICES;

PASSIVATION;

EID: 67650506801     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.05.074     Document Type: Article

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