Micro-Raman spectroscopy stress measurement method for porous silicon film

Optics and Lasers in Engineering

Volumn 48, Issue 11, 2010, Pages 1119-1125

  Li, Qiu ^a   Qiu, Wei ^a   Tan, Haoyun ^a   Guo, Jiangang ^a   Kang, Yilan ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Elastic modulus; Porous silicon; Raman spectroscopy; Residual stress

Indexed keywords

DIGITAL SPECKLE CORRELATION METHOD; DISTRIBUTION OF RESIDUAL STRESS; EFFECTIVE STRESS; LATTICE DYNAMICS; MATERIAL PARAMETER; MATHEMATICAL EXPRESSIONS; MEASUREMENT METHODS; MICRO RAMAN SPECTROSCOPY; NANOINDENTATION TECHNIQUES; POISSON'S RATIO; POROUS SILICON FILMS; RAMAN SHIFT; SECULAR EQUATIONS; STRESS COEFFICIENTS; STRESS COMPONENT; SUBSTRATE STRUCTURE; THEORETICAL INVESTIGATIONS; THICKNESS DIRECTION; TRANSVERSELY ISOTROPIC; TRANSVERSELY ISOTROPIC MATERIALS;

CRYSTAL LATTICES; ELASTIC MODULI; INSTRUMENTS; NANOINDENTATION; POISSON RATIO; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SOLIDS; STRESS MEASUREMENT;

POROUS SILICON;

EID: 77955554896     PISSN: 01438166     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlaseng.2009.12.020     Document Type: Article

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