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Volumn 43, Issue 8, 2005, Pages 847-855

An application of Raman spectroscopy on the measurement of residual stress in porous silicon

Author keywords

Crack; Porosity; Porous silicon; Raman spectroscopy; Residual stress

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACKS; ETCHING; POROSITY; POROUS SILICON; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; STRESS ANALYSIS; SUBSTRATES; THIN FILMS;

EID: 16344364720     PISSN: 01438166     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlaseng.2004.09.005     Document Type: Conference Paper
Times cited : (152)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.