An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy

Chinese Physics Letters

Volumn 21, Issue 2, 2004, Pages 403-405

  Lei, Zhen Kun ^a   Kang, Yi Lan ^a   Hu, Ming ^a   Qiu, Y Yu ^a   Xu, Han ^a   Niu, Hong Pan ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLIC FILMS; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; STRESS MEASUREMENT; THICKNESS MEASUREMENT;

ATOMIC-FORCE-MICROSCOPY; BULK SUBSTRATES; ELECTROCHEMICAL ETCHING TECHNIQUES; EXPERIMENTAL ANALYSIS; MICRO RAMAN SPECTROSCOPY; POROUS SILICON FILMS; RESIDUAL STRESS MEASUREMENTS; STRESS GRADIENT; STRESSES MEASUREMENTS; SURFACE APPEARANCE;

POROUS SILICON;

EID: 1042290718     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/2/053     Document Type: Article

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