The stress analysis of Si MEMS devices by micro-Raman technique

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 4905-4908

  Pan, Xiaojun ^a,b   Tan, Chee Wee ^a   Miao, Jianmin ^a   Kasim, Johnson ^a   Shen, Zexiang ^a   Xie, Erqing ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Micro Raman; Si MEMS device; Stress analysis

Indexed keywords

FABRICATION PARAMETERS; FABRICATION PROCESS; GOOD CORRELATIONS; MANUFACTURING PROCESS; MEMSDEVICES; METAL LAYER; MICRO-RAMAN; RAMAN SHIFT; SI MEMS DEVICE; SOI WAFERS; STRESS CHANGES; THIN METAL FILMS;

AMPLIFICATION; DIAPHRAGMS; FABRICATION; MEMS; METAL ANALYSIS; MICROELECTROMECHANICAL DEVICES; RESIDUAL STRESSES; SILICON; STRENGTH OF MATERIALS; STRESS ANALYSIS;

SILICON WAFERS;

EID: 65649111270     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.120     Document Type: Article

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