Variability on raman shift to stress coefficient of porous silicon

Chinese Physics Letters

Volumn 23, Issue 6, 2006, Pages 1623-1626

  Lei, Zhen Kun ^a,b   Kang, Yi Lan ^b   Cen, Hao ^b   Hu, Ming ^b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPILLARITY; ELASTIC MODULI; POROSITY; RESIDUAL STRESSES;

CAPILLARY FORCE; DRYING PROCESS; LIQUID EVAPORATION; MICRO RAMAN SPECTROSCOPY; MICROPORE STRUCTURE; NONLINEAR RELATIONS; POROUS SILICON FILMS; RAMAN SHIFT; SILICON SAMPLES; STRESS COEFFICIENTS;

POROUS SILICON;

EID: 33746671273     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/6/074     Document Type: Article

References (14)

1. Tang Z A et al 2001 Opt. Pre. Engin. 9 493 (in Chinese)
2. Li X D et al 2005 Opt. Las. Engin. 43 869
3. Miao H et al 2005 Opt. Las. Engin. 43 885
4. Lei Z K et al 2004 Chin. Phys. Lett. 21 1377
5. Lei Z K et al 2005 Trans. Tianjin University (English Edition) 11 85
6. Lei Z K et al 2004 Chin. Phys. Let. 21 403
7. Canhanm L T et al 1992 J. Appl. Phys. 72 1558
8. Kang Y L et al 2005 Opt. Las. Engin. 43 847
9. Lei Z K et al 2005 Chin. Phys. Let. 22 984
10. Ramamurty U et al 2005 Acta Mater. 52 869
11. Bellet D et al 1996 J. Appl. Phys. 60 3772
12. Barla K et al 1984 J. Cryst. Growth 68 727
13. Ingrid D W et al 1996 Semicond. Sci. Technol. 11 139
14. Anastassakis E et al 1990 Phys. Rev. 41B 7529