Study and improvement of interfacial properties in a MIS structure based on p-type InP

Vacuum

Volumn 72, Issue 2, 2003, Pages 123-127

  Chellali, M ^a   Tizi, S ^a   Benamara, Z ^a   Amrani, M ^a   Boudissa, A ^a   Talbi, A ^a   Gruzza, B ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

Capacitance; InP; MIS devices

Indexed keywords

CAPACITANCE; DEFECTS; DEPOSITION; ELECTRIC INSULATORS; INTERFACES (MATERIALS); PASSIVATION;

INSULATOR FILMS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0141888088     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(03)00109-X     Document Type: Article

References (10)

1. Bideux L., Gruzza B., Porte A. Surf Interface Anal. 20:1993;803-807.
2. Hollinger G. J Appl Phys. 67:1990;4173.
3. Chellali M., Akkal B., Tizi S., Benamara Z., Gruzza B., Robert C., Bideux L. Mater Sci Eng. B77:2000;19-23.
4. Sykes RW, Roberts GG, Fok T, Clark DT. IEEE proceedings Part I, 1980. p. 137.
5. Bideux L., Robert C., Gruzza B., Matolin V., Benamara Z. Surf Sci. 352-354:1996;407-410.
6. Gruzza B., Achard B., Pariset C. Surf Sci. 162:1985;202.
7. Terman L.M. Solid State Electron 5:1962;285.
8. Tizi S., Benamara Z., Chellali M., Talbi A., Gruzza B., Merle S., Robert C. Vacuum. 62:2001;315-320.
9. Bideux L., Merle S., Robert C., Gruzza B., Benamara Z., Tizi S., Chellali M. Surf Interface Anal. 26:1998;177-181.
10. Benamara Z., Tizi S., Chellali M., Gruzza B., Bideux L., Robert C. Synth Metals. 90:1997;229-232.