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Journal of Physics Condensed Matter

Volumn 13, Issue 31, 2001, Pages 6615-6624

The properties of a-SiGe:H films fabricated by a novel deposition method

(4) Budaguan, B G a Sherchenkov, A A a Gorbulin, G L a Chernomordic, V D b

a Institute of Electronic Technology (Russian Federation)

b RUSSIAN ACADEMY OF SCIENCES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; COMPOSITION; FABRICATION; FERMI LEVEL; GERMANIUM; INFRARED SPECTROSCOPY; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SURFACE STRUCTURE;

DEPOSITION RATE; GERMANIUM SILICON BOND; OPTICAL BOND GAP; OPTOELECTRONIC PROPERTIES; TAUC BAND GAP;

AMORPHOUS SILICON;

EID: 0035817171 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/31/303 Document Type: Article

Times cited : (6)

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