Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1196-1201

  Chen, K M ^a   Huang, H J ^a   Chang, C Y ^a   Chen, L P ^b   Huang, G W ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; VACUUM APPLICATIONS;

SILICON GERMANIDE; ULTRA-HIGH VACUUM CHEMICAL MOLECULAR EPITAXY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034230383     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582324     Document Type: Article

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