Silicon-germanium films prepared from SiH4 and GeF4 by low frequency plasma deposition

Journal of Non-Crystalline Solids

Volumn 329, Issue 1-3, 2003, Pages 134-139

  Ambrosio, R ^a   Torres, A ^a   Kosarev, A ^a   Zuniga C ^a   Abramov, A S ^b  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; COMPOSITION; FREQUENCIES; INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

DILUTION; PROFILOMETERS;

SEMICONDUCTING FILMS;

EID: 0242525752     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2003.08.027     Document Type: Conference Paper

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