A direct correlation between film structure and solar cell efficiency for HWCVD amorphous silicon germanium alloys

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3532-3535

  Mahan, A H ^a   Xu, Y ^a   Gedvilas, L M ^a   Williamson, D L ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Metallurgical and Materials Engineering   (United States)

Author keywords

Amorphous silicon germanium; H bonding; Hot wire CVD; Solar cells

Indexed keywords

AMORPHOUS SILICON GERMANIUM; DEPOSITION CONDITIONS; DEVICE LAYERS; FILM MICROSTRUCTURES; FILM STRUCTURES; H BONDING; HIGH DEPOSITION RATES; HOT WIRE CVD; I LAYERS; MEDIUM-RANGE ORDERS; PREFERENTIAL ATTACHMENTS; SOLAR CELL EFFICIENCIES; SOURCE GAS; STRUCTURAL COMPARISONS; XRD;

AMORPHOUS ALLOYS; AMORPHOUS SILICON; BICMOS TECHNOLOGY; CERIUM ALLOYS; GERMANIUM; PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; SOLAR CELLS; WIRE;

GERMANIUM ALLOYS;

EID: 64349096411     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.073     Document Type: Article

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