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Journal of Alloys and Compounds

Volumn 504, Issue 2, 2010, Pages 351-356

Electrical and optical properties of In2O3: Mo thin films prepared at various Mo-doping levels

(6) Kaleemulla, S a Madhusudhana Rao, N a Girish Joshi, M a Sivasankar Reddy, A c Uthanna, S b Sreedhara Reddy, P b

a VIT UNIVERSITY (India)

b SRI VENKATESWARA UNIVERSITY (India)

c UNIVERSITY OF COIMBRA (Portugal)

Author keywords

Activated reactive evaporation; Indium oxide; Transparent conducting oxide

Indexed keywords

ACTIVATED REACTIVE EVAPORATION; BAND GAPS; DOPING LEVELS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; INDIUM OXIDE; MOLYBDENUM DOPING; MOLYBDENUM-DOPED INDIUM OXIDE THIN FILMS; OPTICAL TRANSMITTANCE; SUBSTRATE TEMPERATURE; TRANSPARENT CONDUCTING OXIDE; VISIBLE REGION;

CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EVAPORATION; FILM PREPARATION; INDIUM; INDIUM COMPOUNDS; MOLYBDENUM; MOLYBDENUM OXIDE; OPTICAL PROPERTIES; OXIDE FILMS; SUBSTRATES; THIN FILMS;

OPTICAL FILMS;

EID: 77955419958 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.05.068 Document Type: Article

Times cited : (39)

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