Physical properties of In2O3 thin films prepared at various oxygen partial pressures

Journal of Alloys and Compounds

Volumn 479, Issue 1-2, 2009, Pages 589-593

  Kaleemulla, S ^a   Reddy, A Sivasankar ^c   Uthanna, S ^b   Reddy, P Sreedhara ^b  

^a VIT UNIVERSITY   (India)

^b SRI VENKATESWARA UNIVERSITY   (India)

^c UNIVERSITY OF COIMBRA   (Portugal)

Author keywords

Activated reactive evaporation; Indium oxide; Photoluminescence; Transparent conducting oxide

Indexed keywords

ACTIVATED REACTIVE EVAPORATION; ELECTRICAL RESISTIVITIES; EMISSION PEAKS; GLASS SUBSTRATES; INDIUM OXIDE; INFLUENCE OF OXYGENS; OPTICAL TRANSMITTANCES; OXYGEN PARTIAL PRESSURES; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; POLY-CRYSTALLINE; SOLAR SPECTRUM; TRANSPARENT CONDUCTING OXIDE; VISIBLE REGIONS; X-RAY DIFFRACTION STUDIES;

ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; EVAPORATION; INDIUM; OXYGEN; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POSITIVE IONS; THIN FILMS; VAPORS;

INDIUM COMPOUNDS;

EID: 67349279560     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.01.003     Document Type: Article

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