Electrostatic effects of nanoscale dielectric patches in the modification of Schottky contacts

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 16, 2009, Pages

  Song, Justin C W ^a   Goh, Kuan Eng J ^a   Chandrasekhar, Natarajan ^a   Troadec, Cedric ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67650320727     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.165313     Document Type: Article

References (25)

1. C. R. Kagan, D. B. Mitzi, and C. D. Dimitrakopoulos, Science 286, 945 (1999). 10.1126/science.286.5441.945
2. D. R. T. Zahn, S. Park, and T. U. Kampen, Vacuum 67, 101 (2002) 10.1016/S0042-207X(02)00185-9
3. T. U. Kampen, S. Park, and D. R. Zahn, J. Vac. Sci. Technol. B 21, 879 (2003) 10.1116/1.1562636
4. T. Kampen, A. Bekkali, I. Thurzo, D. R. T. Zahn, A. Bolognesi, T. Ziller, A. Di Carlo, and P. Lugli, Appl. Surf. Sci. 234, 313 (2004). 10.1016/j.apsusc.2004.05.258
5. A. Bannani, C. Bobisch, and R. Möller, Science 315, 1824 (2007). 10.1126/science.1138668
6. A. Türüt, N. Yalçin, and M. Saglam, Solid-State Electron. 35, 835 (1992) 10.1016/0038-1101(92)90286-L
7. Y. Onganer, M. Saǧlam, A. Türüt, H. Efeoǧlu, and S Tüzemen, Solid-State Electron. 39, 677 (1996) 10.1016/0038-1101(95)00158- 1
8. Ö. Güllü, Ö. Bariş, M. Biber, and A. Türüt, Appl. Surf. Sci. 254, 3039 (2008). 10.1016/j.apsusc.2007.10.082
9. A. R. Vearey-Roberts and D. A. Evans, Appl. Phys. Lett. 86, 072105 (2005). 10.1063/1.1864255
10. H. Haick, M. Ambrico, T. Ligonzo and D. Cahen, Adv. Mater. (Weinheim, Ger.) 16, 2145 (2004). 10.1002/adma.200400923
11. M. A. Kuikka, W. Li, K. L. Kavanagh, and H.-Z. Yu, J. Phys. Chem. C 112, 9081 (2008). 10.1021/jp802685j
12. S. Özcan, J. Smoliner, M. Andrews, and G. Strasser, T. Dienel, R. Franke, and T. Fritz, Appl. Phys. Lett. 90, 092107 (2007). 10.1063/1.2710211
13. Kuan Eng J. Goh, A. Bannani, and C. Troadec, Nanotechnology 19, 445718 (2008). 10.1088/0957-4484/19/44/445718
14. J. Bardeen, Phys. Rev. 71, 717 (1947). 10.1103/PhysRev.71.717
15. V. Heine, Phys. Rev. 138, A1689 (1965). 10.1103/PhysRev.138.A1689
16. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979). 10.1116/1.570215
17. A. M. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965). 10.1063/1.1702952
18. S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007).
19. T. Shimada, H. Nogawa, T. Hasegawa, R. Okada, H. Ichikawa, K. Ueno, and K. Saiki, Appl. Phys. Lett. 87, 061917 (2005). 10.1063/1.2008371
20. The condition for the thickness of the dielectric film for which the electrochemical energies in the heterojunction can still line up is in practice a difficult one to write down. Here we consider the case where no bias is applied across the device (as is the case in BEES). The condition is connected to the practical time scales that samples are prepared and then measured. We can estimate (order of magnitude) the time taken to equilibrate as τ eA ψ1/2 mr 1/2 δ, where A=1.025-1 eV-1/2, ψ is the potential barrier, and mr is the relative effective mass in the dielectric. For the pentacene effective mass of mr =0.3, we find that 2 nm thickness takes just under 8 h to equilibrate. However, 4 nm takes more than 20 years. We emphasize that these are order of magnitude estimates.
21. The values used in Eq. 13 were ψbi =0.83 V- ξn - Δ image δ=0, ξn =0.3 V, kT/e=0.025 V, sr =11.9, and org r =4.0. The value chosen for ψbi corresponds Au/n-Si (111) barrier measured. We can use this value for ψbi as a first-order approximation together with the thickness of the pentacene as δ. This makes the calculation cleaner as it is less dependant on measurements in the literature of m -χ. We find that the higher-order corrections are significantly (a few orders of magnitude) smaller than the first-order approximation that we used.
22. M. Prietsch, Phys. Rep. 253, 163 (1995). 10.1016/0370-1573(94)00082-E
23. W. J. Kaiser and L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988). 10.1103/PhysRevLett.60.1406
24. L. D. Bell and W. J. Kaiser, Phys. Rev. Lett. 61, 2368 (1988). 10.1103/PhysRevLett.61.2368
25. J. Tersoff, Surf. Sci. 168, 275 (1986). 10.1016/0039-6028(86)90857-5