Temperature dependence of current-voltage characteristics of Au/n-GaAs epitaxial Schottky diode

Bulletin of Materials Science

Volumn 23, Issue 6, 2000, Pages 471-474

  Singh, R ^a   Arora, S K ^a   Tyagi, Renu ^b   Agarwal, S K ^b   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GOLD; INTERFACES (MATERIALS); MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

DOPANT CONCENTRATION; IDEALITY FACTOR; LATERAL INHOMOGENEITIES; REVERSE BREAKDOWN VOLTAGE; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0034479925     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02903886     Document Type: Article

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