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Volumn , Issue , 2009, Pages 1-9

Design and process of 3D MEMS packaging

Author keywords

3D IC integration; Low temperature bonding; MEMS; SiP; TSV; Wafer level packaging

Indexed keywords

ASSEMBLY PROCESS; DESIGN AND ASSEMBLIES; ELECTRICAL PERFORMANCE; LOW TEMPERATURE BONDING; SIP; THROUGH-SILICON-VIA; TSV; WAFER LEVEL PACKAGING;

EID: 77955220633     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (32)
  • 5
    • 14644390157 scopus 로고    scopus 로고
    • INSPEC, IEEE, London, United Kingdom
    • Hsu, T. R., MEMS Packaging, INSPEC, IEEE, London, United Kingdom, 2004.
    • (2004) MEMS Packaging
    • Hsu, T.R.1
  • 10
    • 58349104327 scopus 로고    scopus 로고
    • Study of low temperature thermocompression bonding in ag-in solder for packaging applications
    • Made, R., Gan, C. L., Yan, L., Yu, A., Yoon, S. U., Lau, J. H., and Lee, C. "Study of low temperature thermocompression bonding in Ag-In solder for packaging applications." J. Electron. Mater. 38:365-371, 2009.
    • (2009) J. Electron. Mater. , vol.38 , pp. 365-371
    • Made, R.1    Gan, C.L.2    Yan, L.3    Yu, A.4    Yoon, S.U.5    Lau, J.H.6    Lee, C.7
  • 11
    • 57649222007 scopus 로고    scopus 로고
    • A hermetic seal using composite thin solder in/Sn as intermediate layer and its interdiffusion reaction with cu
    • Yan, L.-L., Lee, C.-K., Yu, D.-Q., Yu, A.-B., Choi, W.-K., Lau, J. H., and Yoon, S.-U. "A hermetic seal using composite thin solder In/Sn as intermediate layer and its interdiffusion reaction with Cu." J. Electron. Mater. 38:200-207, 2009.
    • (2009) J. Electron. Mater. , vol.38 , pp. 200-207
    • Yan, L.-L.1    Lee, C.-K.2    Yu, D.-Q.3    Yu, A.-B.4    Choi, W.-K.5    Lau, J.H.6    Yoon, S.-U.7
  • 14
    • 68849091021 scopus 로고    scopus 로고
    • Characterization of intermediate in/Ag layers of low temperature fluxless solder based wafer bonding for MEMS packaging
    • Lee, C., Yu, A., Yan, L., Wang, H., Han, J., Zhang, Q., and Lau, J. H., "Characterization of intermediate In/Ag layers of low temperature fluxless solder based wafer bonding for MEMS packaging." J. Sensors Actuators, 154:85-91, 2009.
    • (2009) J. Sensors Actuators , vol.154 , pp. 85-91
    • Lee, C.1    Yu, A.2    Yan, L.3    Wang, H.4    Han, J.5    Zhang, Q.6    Lau, J.H.7
  • 15
    • 84876919765 scopus 로고    scopus 로고
    • The role of ni buffer layer on high yield low temperature hermetic wafer bonding using in/Sn/Cu metallization
    • (in press)
    • Yu, D.-Q., Lee, C., Yan, L. L., Choi, W. K., Yu, A., and Lau, J. H. "The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization." Appl. Phys. Lett. (in press).
    • Appl. Phys. Lett.
    • Yu, D.-Q.1    Lee, C.2    Yan, L.L.3    Choi, W.K.4    Yu, A.5    Lau, J.H.6
  • 17
    • 64049083685 scopus 로고    scopus 로고
    • The role of ni buffer layer between InSn solder and cu metallization for hermetic wafer bonding
    • Taipei, Taiwan, October 22-24
    • Yu, D., Lee, C., and Lau, J. H. "The role of Ni buffer layer between InSn solder and Cu metallization for hermetic wafer bonding." Proceedings of the International Conference on Electronics Materials and Packaging, Taipei, Taiwan, October 22-24, 2008, pp. 335-338.
    • (2008) Proceedings of the International Conference on Electronics Materials and Packaging , pp. 335-338
    • Yu, D.1    Lee, C.2    Lau, J.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.