The role ofni buffer layer between insn solder and eu metallization for hermetic wafer bonding

2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008

Volumn , Issue , 2008, Pages 171-174

  Yu, Daquan ^a   Lee, Chengkuo ^a,b   Lau, John H ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING PARAMETERS; CU METALLIZATION; DIFFUSION PHENOMENON; HERMETIC PROPERTIES; HERMETIC SEALING; IC PACKAGING; LOW TEMPERATURES; METALLIZATION;

BRAZING; BUFFER LAYERS; CHIP SCALE PACKAGES; METALLIZING; PACKAGING MATERIALS; SEALING (CLOSING); SOLDERING ALLOYS; WELDING;

WAFER BONDING;

EID: 64049083685     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMAP.2008.4784256     Document Type: Conference Paper

References (10)

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10. D. Q. Yu, C. Lee, L. L. Yan, W. K. Choi, and 1. H. Lau, The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization, Appl. Phys. Lett., submitted.