Simulations of chemical vapor deposition diamond film growth using a kinetic Monte Carlo model

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  May, P W ^a   Harvey, J N ^a   Allan, N L ^a   Richley, J C ^a   Mankelevich, Yu A ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED SPECIES; AVERAGE NUMBERS; CARBON SPECIES; CHEMICAL VAPOR DEPOSITION DIAMOND FILMS; CVD DIAMOND; DIAMOND LATTICES; GASPHASE; GROWING SURFACES; GROWTH MECHANISMS; KINETIC MONTE CARLO MODEL; LANGMUIR-HINSHELWOOD; LOW SUBSTRATE TEMPERATURE; PREDICTED GROWTH; RADICAL SITES; SUBSTRATE TEMPERATURE; SURFACE MIGRATION; SURFACE SPECIES;

ADSORPTION; AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DIAMOND FILMS; DIAMONDS; MONTE CARLO METHODS; REACTION RATES;

FILM GROWTH;

EID: 77955209328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3437647     Document Type: Article

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