Etching effects during the chemical vapor deposition of (100) diamond

Journal of Chemical Physics

Volumn 111, Issue 9, 1999, Pages 4291-4299

  Battaile, C C ^a   Srolovitz, D J ^b   Oleinik, I I ^c   Pettifor, D G ^c   Sutton, A P ^c   Harris, S J ^d   Butler, J E ^e  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d GENERAL MOTORS CORPORATION   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ETCHING; FILM GROWTH; FUNCTIONS; HYDROCARBONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; RATE CONSTANTS;

DENSITY FUNCTIONAL THEORY (DFT);

DIAMOND FILMS;

EID: 0032620971     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.479727     Document Type: Article

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