Simulations of polycrystalline CVD diamond film growth using a simplified Monte Carlo model

Diamond and Related Materials

Volumn 19, Issue 5-6, 2010, Pages 389-396

  May, P W ^a   Allan, N L ^a   Ashfold, M N R ^a   Richley, J C ^a   Mankelevich, Yu A ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

CVD diamond growth; Modelling; Nanodiamond; Nucleation

Indexed keywords

C ATOMS; CHEMICAL VAPOUR DEPOSITION; COLUMNAR STRUCTURES; CRITICAL NUCLEI; CVD DIAMOND; FILM MORPHOLOGY; GROWING SURFACES; HETEROEPITAXIAL; MEAN SIZE; MICROCRYSTALLINE DIAMOND; MONTE CARLO; MONTE CARLO MODEL; NANOCRYSTALLINES; NANODIAMOND NUCLEATION; POLYCRYSTALLINE CVD DIAMOND; RANDOM SEEDS; RANDOM SURFACES; REACTION PROBABILITY; RENUCLEATION; SINGLE CRYSTAL DIAMOND; SURFACE MIGRATION; TEMPLATING; ULTRA-NANOCRYSTALLINE DIAMOND; UNDERLYING LAYERS;

ADSORPTION; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIAMOND FILMS; DIAMONDS; FILM GROWTH; MONTE CARLO METHODS; NUCLEATION; PROBABILITY; SINGLE CRYSTALS;

SURFACE DEFECTS;

EID: 77950461445     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.10.030     Document Type: Article

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