Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

IEEE Photonics Technology Letters

Volumn 22, Issue 4, 2010, Pages 257-259

  Kuo, C H ^a   Chang, L C ^a   Kuo, C W ^a   Chi, G C ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

InGaN GaN; Light emitting diode (led); Nano; Template

Indexed keywords

CRYSTAL QUALITIES; EFFICIENCY IMPROVEMENT; ETCHING MASKS; GAN EPILAYERS; GAN LIGHT-EMITTING DIODES; GAN NANORODS; GAN TEMPLATE; LOW TEMPERATURES; NANO-ISLANDS; NUCLEATION LAYERS; OUTPUT POWER; SELF-ASSEMBLE;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANORODS;

LIGHT EMITTING DIODES;

EID: 77955192287     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2038595     Document Type: Article

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