Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Lisesivdin, S B ^a,b   Yildiz, A ^c,d   Balkan, N ^e   Kasap, M ^b   Ozcelik, S ^b   Ozbay, E ^a,f  

^a BILKENT UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c AHI EVRAN UNIVERSITY   (Turkey)

^d ANKARA UNIVERSITY   (Turkey)

^e UNIVERSITY OF ESSEX   (United Kingdom)

^f Bilkent University Department of Physics ^*  (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC-PHONON SCATTERING; ALGAN/GAN; ALN; BACKGROUND IMPURITIES; BULK CARRIER; BULK SCATTERING; CARRIER DENSITY; DEFORMATION POTENTIAL; EXTRACTION METHOD; FITTING PARAMETERS; HETEROSTRUCTURES; INTERFACE ROUGHNESS SCATTERING; IONIZED IMPURITIES; METAL-ORGANIC; PARALLEL CONDUCTION; POLAR OPTICAL PHONON SCATTERING; SCATTERING ANALYSIS; SCATTERING MECHANISMS; TEMPERATURE DEPENDENT; THEORETICAL MODELS;

CARRIER CONCENTRATION; ELECTRON GAS; GALLIUM; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; IONIZATION OF GASES; MAGNETIC FIELDS; METAL RECOVERY; ORGANIC CHEMICALS; PHASE INTERFACES; PHONON SCATTERING; PHONONS; SMELTING; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 77955178105     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456008     Document Type: Article

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