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Journal of Physics Condensed Matter

Volumn 14, Issue 13, 2002, Pages 3457-3468

Energy and momentum relaxation of hot electrons in GaN/AlGaN

(6) Balkan, N a Arikan, M C b Gokden, S c Tilak, V d Schaff, B d Shealy, R J d

a UNIVERSITY OF ESSEX (United Kingdom)

b ISTANBUL UNIVERSITY (Turkey)

c BALIKESIR UNIVERSITY (Turkey)

d Department of Molecular Biology and Genetics (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; GALLIUM NITRIDE; HOT CARRIERS; MATHEMATICAL MODELS; NUMERICAL METHODS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS;

DRIFT VELOCITY; ELECTRON ENERGY LOSS RATE; ELECTRON TEMPERATURE; HOT ELECTRON ENERGY; MOMENTUM RELAXATION; MOMENTUM RELAXATION TIME; PHONON SCATTERING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037041136 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/13/305 Document Type: Article

Times cited : (60)

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