Analysis of diffusion involved in degradation of InGaN-based laser diodes

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 736-740

  Orita, K ^a   Takigawa, S ^a   Yuri, M ^a   Tanaka, T ^a   Meneghini, M ^b   Trivellin, N ^b   Trevisanello, L R ^b   Zanoni, E ^b   Meneghesso, G ^b  

^a PANASONIC CORPORATION   (Japan)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Degradation; Diffusion; GaN; Laser diode; Non radiative recombination

Indexed keywords

ACTIVE LAYER; BLUE LASER DIODES; BULK MATERIALS; CONCENTRATION OF; DEGRADATION ANALYSIS; DEGRADATION KINETICS; DENSITY EVOLUTION; DEPTH DISTRIBUTION; DIFFUSION COEFFICIENTS; DIFFUSION PROCESS; FICK'S DIFFUSION EQUATION; GAN; LASER DIODE; LASER DIODES; NON-RADIATIVE RECOMBINATION; NON-RADIATIVE RECOMBINATIONS; STRESS TEST; THRESHOLD CURRENTS;

ACOUSTIC NOISE; DEGRADATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LADDER NETWORKS; LASERS; SEMICONDUCTING GALLIUM;

DIFFUSION;

EID: 70449084633     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173340     Document Type: Conference Paper

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