N-polar InAlN/AlN/GaN MIS-HEMTs

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 800-802

  Brown, David F ^a   Nidhi, ^a   Wu, Feng ^a   Keller, Stacia ^a   Denbaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

GaN; high electron mobility transistor (HEMT); InAlN; metalinsulatorsemiconductor (MIS); N face

Indexed keywords

ANISOTROPIC CONDUCTIVITY; D ELECTRONS; DRAIN BIAS; GATE INSULATOR; GATE LENGTH; HALL MEASUREMENTS; HETEROSTRUCTURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; ON-RESISTANCE; POWER GAINS; RESISTANCE MEASUREMENT; SHEET CHARGE DENSITY; SOURCE-DRAIN; SUBSTRATE MISORIENTATION; SURFACE STEPS; VANDER PAUW GEOMETRY; VICINAL SAPPHIRE;

CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; TWO DIMENSIONAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955126250     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050052     Document Type: Article

References (20)

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