High-performance N-face GaN microwave MIS-HEMTs with > 70% power-added efficiency

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 802-804

  Wong, Man Hoi ^a   Pei, Yi ^a   Brown, David F ^a   Keller, Stacia ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

AlN; Back barrier; GaN; High electron mobility transistor (HEMT); metal insulator semiconductor (MIS); Microwave power; N face; Power added efficiency (PAE)

Indexed keywords

ALN; BACK-BARRIER; GAN; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); METAL-INSULATOR-SEMICONDUCTOR (MIS); MICROWAVE POWER; N-FACE; POWER-ADDED EFFICIENCY (PAE);

ELECTRON GAS; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METAL INSULATOR BOUNDARIES; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; MIS DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SWITCHING CIRCUITS; TRANSISTORS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 68249137196     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024443     Document Type: Article

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