High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Wong, Man Hoi ^a   Pei, Yi ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN NUCLEATION LAYERS; ELECTRICAL MEASUREMENTS; GAN BUFFERS; GAN EPILAYERS; GAN FILMS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-POWER; MOSAIC STRUCTURES; OUTPUT POWER DENSITIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; POWER-ADDED EFFICIENCIES; SECONDARY ION MASS SPECTROSCOPIES; SIC SUBSTRATES; STRUCTURAL AND ELECTRICAL PROPERTIES; X- RAY DIFFRACTIONS;

CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NUCLEATION; PLASMA DIAGNOSTICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE;

GALLIUM ALLOYS;

EID: 65549094078     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130228     Document Type: Article

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