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Volumn 80, Issue 19, 2009, Pages

Hydrogen diffusion in GaAs1-x Nx

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EID: 77954732167     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.195206     Document Type: Article
Times cited : (26)

References (62)
  • 1
    • 0004086805 scopus 로고
    • edited by J. I. Pankove and N. M. Johnson (Academic Press, Boston
    • Hydrogen in Semiconductors, Semiconductors and Semimetals, edited by, J. I. Pankove, and, N. M. Johnson, (Academic Press, Boston, 1991), Vol. 34.
    • (1991) Hydrogen in Semiconductors, Semiconductors and Semimetals , vol.34
  • 7
    • 0038172513 scopus 로고    scopus 로고
    • Universal alignment of hydrogen levels in semiconductors, insulators and solutions
    • DOI 10.1038/nature01665
    • C. G. Van de Walle and J. Neugebauer, Nature (London) 423, 626 (2003). 10.1038/nature01665 (Pubitemid 36713219)
    • (2003) Nature , vol.423 , Issue.6940 , pp. 626-628
    • Van De Walle, C.G.1    Neugebauer, J.2
  • 8
    • 38549181838 scopus 로고    scopus 로고
    • Sources of unintentional conductivity in InN
    • DOI 10.1063/1.2832369
    • A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. 92, 032104 (2008). 10.1063/1.2832369 (Pubitemid 351160611)
    • (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 032104
    • Janotti, A.1    Van De Walle, C.G.2
  • 10
    • 67649937526 scopus 로고    scopus 로고
    • N-type doping of oxides by hydrogen
    • DOI 10.1063/1.1482783
    • Ç. KIlIç and A. Zunger, Appl. Phys. Lett. 81, 73 (2002). 10.1063/1.1482783 (Pubitemid 34783706)
    • (2002) Applied Physics Letters , vol.81 , Issue.1 , pp. 73
    • Klc, C.1    Zunger, A.2
  • 11
  • 12
    • 33846011101 scopus 로고    scopus 로고
    • Hydrogen multicentre bonds
    • DOI 10.1038/nmat1795, PII NMAT1795
    • Anderson Janotti and Chris G. Van de Walle, Nature Mater. 6, 44 (2007). 10.1038/nmat1795 (Pubitemid 46041475)
    • (2007) Nature Materials , vol.6 , Issue.1 , pp. 44-47
    • Janotti, A.1    Van De Walle, C.G.2
  • 13
    • 34347370671 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.75.241102
    • H. Takenaka and D. J. Singh, Phys. Rev. B 75, 241102 (R) (2007). 10.1103/PhysRevB.75.241102
    • (2007) Phys. Rev. B , vol.75 , pp. 241102
    • Takenaka, H.1    Singh, D.J.2
  • 14
    • 65649147261 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.79.205201
    • M.-H. Du and D. J. Singh, Phys. Rev. B 79, 205201 (2009). 10.1103/PhysRevB.79.205201
    • (2009) Phys. Rev. B , vol.79 , pp. 205201
    • Du, M.-H.1    Singh, D.J.2
  • 21
    • 18444399583 scopus 로고    scopus 로고
    • edited by I. A. Buyanova and W. M. Chen (Taylor & Francis, New York
    • Physics and Applications of Dilute Nitrides, edited by, I. A. Buyanova, and, W. M. Chen, (Taylor & Francis, New York, 2004).
    • (2004) Physics and Applications of Dilute Nitrides
  • 22
    • 85014169645 scopus 로고    scopus 로고
    • edited by M. Henini (Elsevier, Oxford, UK
    • Dilute Nitride Semiconductors, edited by, M. Henini, (Elsevier, Oxford, UK, 2005).
    • (2005) Dilute Nitride Semiconductors
  • 34
    • 0035911682 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.86.2613;
    • P. R. C. Kent and A. Zunger, Phys. Rev. Lett. 86, 2613 (2001) 10.1103/PhysRevLett.86.2613
    • (2001) Phys. Rev. Lett. , vol.86 , pp. 2613
    • Kent, P.R.C.1    Zunger, A.2
  • 35
    • 0035884111 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.64.115208
    • P. R. C. Kent and A. Zunger, Phys. Rev. B 64, 115208 (2001). 10.1103/PhysRevB.64.115208
    • (2001) Phys. Rev. B , vol.64 , pp. 115208
    • Kent, P.R.C.1    Zunger, A.2
  • 37
    • 19744377544 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.93.196402
    • A. Lindsay and E. P. O'Reilly, Phys. Rev. Lett. 93, 196402 (2004). 10.1103/PhysRevLett.93.196402
    • (2004) Phys. Rev. Lett. , vol.93 , pp. 196402
    • Lindsay, A.1    O'Reilly, E.P.2
  • 48
    • 34547363847 scopus 로고    scopus 로고
    • H-induced dangling bonds in H-isoelectronic-impurity complexes formed in GaAs1-yNy alloys
    • DOI 10.1103/PhysRevLett.98.206403
    • A. Amore Bonapasta, F. Filippone, and G. Mattioli, Phys. Rev. Lett. 98, 206403 (2007). 10.1103/PhysRevLett.98.206403 (Pubitemid 47139597)
    • (2007) Physical Review Letters , vol.98 , Issue.20 , pp. 206403
    • Amore Bonapasta, A.1    Filippone, F.2    Mattioli, G.3
  • 53
    • 0001752740 scopus 로고
    • 10.1063/1.344179
    • R. A. Morrow, J. Appl. Phys. 66, 2973 (1989). 10.1063/1.344179
    • (1989) J. Appl. Phys. , vol.66 , pp. 2973
    • Morrow, R.A.1
  • 58
    • 77954696200 scopus 로고    scopus 로고
    • The larger uncertainty on Eb is due to the lower sensitivity of SIMS simulations on this parameter for TD ≤300°C. Indeed, the dissociation process of N-2D complexes is fully activated at higher temperature.
    • The larger uncertainty on E b is due to the lower sensitivity of SIMS simulations on this parameter for T D ≤ 300 ° C. Indeed, the dissociation process of N-2D complexes is fully activated at higher temperature.
  • 61
    • 77954747360 scopus 로고    scopus 로고
    • Although an exponential decay is not observed for TD =350°C, lD is the length within which the D concentration decreases by a factor 10 on starting from half of its maximum concentration.
    • Although an exponential decay is not observed for T D = 350 ° C, l D is the length within which the D concentration decreases by a factor 10 on starting from half of its maximum concentration.


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