H-induced dangling bonds in H-isoelectronic-impurity complexes formed in GaAs1-yNy alloys

Physical Review Letters

Volumn 98, Issue 20, 2007, Pages

  Amore Bonapasta, A ^a   Filippone, F ^a   Mattioli, G ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; GALLIUM ALLOYS; HYDROGEN BONDS; PASSIVATION; SEMICONDUCTOR MATERIALS;

ATOM INTERACTION; H-ISOELECTRONIC-IMPURITY INTERACTIONS; ISOELECTRONIC IMPURITY;

DANGLING BONDS;

EID: 34547363847     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.206403     Document Type: Article

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