-
1
-
-
85039014718
-
-
0163-1829 10.1103/PhysRevB.63.201304, (R).
-
A. Polimeni, G. Baldassarri H. v., H. M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63.201304 63, 201304 (R) (2001).
-
(2001)
Phys. Rev. B
, vol.63
, pp. 201304
-
-
Polimeni, A.1
Baldassarri, H.V.G.2
Bissiri, H.M.3
Capizzi, M.4
Fischer, M.5
Reinhardt, M.6
Forchel, A.7
-
2
-
-
0037826786
-
-
0163-1829 10.1103/PhysRevB.67.201303, (R).
-
A. Polimeni, M. Bissiri, M. Felici, M. Capizzi, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu, Phys. Rev. B 0163-1829 10.1103/PhysRevB.67.201303 67, 201303 (R) (2003).
-
(2003)
Phys. Rev. B
, vol.67
, pp. 201303
-
-
Polimeni, A.1
Bissiri, M.2
Felici, M.3
Capizzi, M.4
Buyanova, I.A.5
Chen, W.M.6
Xin, H.P.7
Tu, C.W.8
-
3
-
-
33644553124
-
-
0163-1829 10.1103/PhysRevB.73.073201.
-
F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.073201 73, 073201 (2006).
-
(2006)
Phys. Rev. B
, vol.73
, pp. 073201
-
-
Masia, F.1
Pettinari, G.2
Polimeni, A.3
Felici, M.4
Miriametro, A.5
Capizzi, M.6
Lindsay, A.7
Healy, S.B.8
O'Reilly, E.P.9
Cristofoli, A.10
Bais, G.11
Piccin, M.12
Rubini, S.13
Martelli, F.14
Franciosi, A.15
Klar, P.J.16
Volz, K.17
Stolz, W.18
-
4
-
-
33747124027
-
-
0003-6951 10.1063/1.2335508.
-
G. Bisognin, D. De Salvador, A. V. Drigo, E. Napolitani, A. Sambo, M. Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P. J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi, Appl. Phys. Lett. 0003-6951 10.1063/1.2335508 89, 061904 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 061904
-
-
Bisognin, G.1
De Salvador, D.2
Drigo, A.V.3
Napolitani, E.4
Sambo, A.5
Berti, M.6
Polimeni, A.7
Felici, M.8
Capizzi, M.9
Güngerich, M.10
Klar, P.J.11
Bais, G.12
Jabeen, F.13
Piccin, M.14
Rubini, S.15
Martelli, F.16
Franciosi, A.17
-
5
-
-
36348947325
-
-
0163-1829 10.1103/PhysRevB.76.205323.
-
M. Berti, G. Bisognin, D. DeSalvador, E. Napolitani, S. Vangelista, A. Polimeni, M. Capizzi, F. Boscherini, G. Ciatto, S. Rubini, F. Martelli, and A. Franciosi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.205323 76, 205323 (2007).
-
(2007)
Phys. Rev. B
, vol.76
, pp. 205323
-
-
Berti, M.1
Bisognin, G.2
Desalvador, D.3
Napolitani, E.4
Vangelista, S.5
Polimeni, A.6
Capizzi, M.7
Boscherini, F.8
Ciatto, G.9
Rubini, S.10
Martelli, F.11
Franciosi, A.12
-
6
-
-
33746819954
-
-
0935-9648 10.1002/adma.200600487.
-
M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, and A. Franciosi, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200600487 18, 1993 (2006).
-
(2006)
Adv. Mater. (Weinheim, Ger.)
, vol.18
, pp. 1993
-
-
Felici, M.1
Polimeni, A.2
Salviati, G.3
Lazzarini, L.4
Armani, N.5
Masia, F.6
Capizzi, M.7
Martelli, F.8
Lazzarino, M.9
Bais, G.10
Piccin, M.11
Rubini, S.12
Franciosi, A.13
-
7
-
-
33847618246
-
-
0003-6951 10.1063/1.2709629.
-
M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M. Patrini, A. Polimeni, R. Trotta, M. Capizzi, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi, Appl. Phys. Lett. 0003-6951 10.1063/1.2709629 90, 091907 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 091907
-
-
Geddo, M.1
Ciabattoni, T.2
Guizzetti, G.3
Galli, M.4
Patrini, M.5
Polimeni, A.6
Trotta, R.7
Capizzi, M.8
Bais, G.9
Piccin, M.10
Rubini, S.11
Martelli, F.12
Franciosi, A.13
-
8
-
-
44849133439
-
-
0003-6951 10.1063/1.2939000.
-
R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, and A. Gerardino, Appl. Phys. Lett. 0003-6951 10.1063/1.2939000 92, 221901 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 221901
-
-
Trotta, R.1
Polimeni, A.2
Capizzi, M.3
Giubertoni, D.4
Bersani, M.5
Bisognin, G.6
Berti, M.7
Rubini, S.8
Martelli, F.9
Mariucci, L.10
Francardi, M.11
Gerardino, A.12
-
10
-
-
34548625987
-
-
0039-6028 10.1016/j.susc.2007.04.142.
-
A. A. Suvorova and S. Samarin, Surf. Sci. 0039-6028 10.1016/j.susc.2007. 04.142 601, 4428 (2007).
-
(2007)
Surf. Sci.
, vol.601
, pp. 4428
-
-
Suvorova, A.A.1
Samarin, S.2
-
11
-
-
0029278241
-
-
0304-3991 10.1016/0304-3991(94)00183-N.
-
D. D. Perovic, M. R. Castell, A. Howie, C. Lavoie, T. Tiedje, and J. S. W. Cole, Ultramicroscopy 0304-3991 10.1016/0304-3991(94)00183-N 58, 104 (1995).
-
(1995)
Ultramicroscopy
, vol.58
, pp. 104
-
-
Perovic, D.D.1
Castell, M.R.2
Howie, A.3
Lavoie, C.4
Tiedje, T.5
Cole, J.S.W.6
-
12
-
-
0029360408
-
-
0304-3991 10.1016/0304-3991(95)00069-6.
-
P. G. Merli, A. Migliori, M. Nacucci, D. Govoni, and G. Mattei, Ultramicroscopy 0304-3991 10.1016/0304-3991(95)00069-6 60, 229 (1995).
-
(1995)
Ultramicroscopy
, vol.60
, pp. 229
-
-
Merli, P.G.1
Migliori, A.2
Nacucci, M.3
Govoni, D.4
Mattei, G.5
-
14
-
-
0001332240
-
-
0031-9007 10.1103/PhysRevLett.35.1522.
-
R. C. Alig and S. Bloom, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 35.1522 35, 1522 (1975).
-
(1975)
Phys. Rev. Lett.
, vol.35
, pp. 1522
-
-
Alig, R.C.1
Bloom, S.2
-
15
-
-
0031550425
-
-
0169-4332 10.1016/S0169-4332(96)00729-5.
-
A. Shih, J. Yater, C. Hor, and R. Abrams, Appl. Surf. Sci. 0169-4332 10.1016/S0169-4332(96)00729-5 111, 251 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.111
, pp. 251
-
-
Shih, A.1
Yater, J.2
Hor, C.3
Abrams, R.4
-
16
-
-
51749120970
-
-
The conduction band offset, that corresponds to the electron affinity difference (see Ref.) is at least 90% of the total band gareduction (see Ref.).
-
The conduction band offset, that corresponds to the electron affinity difference (see Ref.) is at least 90% of the total band gap reduction (see Ref.).
-
-
-
-
18
-
-
17644376849
-
-
0003-6951 10.1063/1.1898441, ();, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.155324 72, 155324 (2005). In the GaAsN/GaAsN:H heterostructures, a small valence band offset is present because of the different strain conditions present in the GaAsN and GaAsN:H layers. This offset has been estimated to be less than 20 meV, about 10% of the band gadifference between GaAsN:H and GaAsN.
-
M. Galluppi, L. Geelhaar, and H. Riechert, Appl. Phys. Lett. 0003-6951 10.1063/1.1898441 86, 131925 (2005); M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, and W. Stolz, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.155324 72, 155324 (2005). In the GaAsN/GaAsN:H heterostructures, a small valence band offset is present because of the different strain conditions present in the GaAsN and GaAsN:H layers. This offset has been estimated to be less than 20 meV, about 10% of the band gap difference between GaAsN:H and GaAsN.
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 131925
-
-
Galluppi, M.1
Geelhaar, L.2
Riechert, H.3
Galluppi, M.4
Geelhaar, L.5
Riechert, H.6
Hetterich, M.7
Grau, A.8
Birner, S.9
Stolz, W.10
|