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Volumn 93, Issue 10, 2008, Pages

In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; ENERGY GAP; GALLIUM ALLOYS; MASS SPECTROMETRY; MODULATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPONTANEOUS EMISSION;

EID: 51749108400     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2981689     Document Type: Article
Times cited : (10)

References (18)
  • 10
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    • A. A. Suvorova and S. Samarin, Surf. Sci. 0039-6028 10.1016/j.susc.2007. 04.142 601, 4428 (2007).
    • (2007) Surf. Sci. , vol.601 , pp. 4428
    • Suvorova, A.A.1    Samarin, S.2
  • 13
  • 14
    • 0001332240 scopus 로고
    • 0031-9007 10.1103/PhysRevLett.35.1522.
    • R. C. Alig and S. Bloom, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 35.1522 35, 1522 (1975).
    • (1975) Phys. Rev. Lett. , vol.35 , pp. 1522
    • Alig, R.C.1    Bloom, S.2
  • 16
    • 51749120970 scopus 로고    scopus 로고
    • The conduction band offset, that corresponds to the electron affinity difference (see Ref.) is at least 90% of the total band gareduction (see Ref.).
    • The conduction band offset, that corresponds to the electron affinity difference (see Ref.) is at least 90% of the total band gap reduction (see Ref.).
  • 18
    • 17644376849 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.1898441, ();, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.155324 72, 155324 (2005). In the GaAsN/GaAsN:H heterostructures, a small valence band offset is present because of the different strain conditions present in the GaAsN and GaAsN:H layers. This offset has been estimated to be less than 20 meV, about 10% of the band gadifference between GaAsN:H and GaAsN.
    • M. Galluppi, L. Geelhaar, and H. Riechert, Appl. Phys. Lett. 0003-6951 10.1063/1.1898441 86, 131925 (2005); M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, and W. Stolz, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.155324 72, 155324 (2005). In the GaAsN/GaAsN:H heterostructures, a small valence band offset is present because of the different strain conditions present in the GaAsN and GaAsN:H layers. This offset has been estimated to be less than 20 meV, about 10% of the band gap difference between GaAsN:H and GaAsN.
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 131925
    • Galluppi, M.1    Geelhaar, L.2    Riechert, H.3    Galluppi, M.4    Geelhaar, L.5    Riechert, H.6    Hetterich, M.7    Grau, A.8    Birner, S.9    Stolz, W.10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.