Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Bisognin, G ^a   De Salvador, D ^a   Drigo, A V ^a   Napolitani, E ^a   Sambo, A ^a   Berti, M ^a   Polimeni, A ^b   Felici, M ^b   Capizzi, M ^b   Gungerich ^b   Klar, P J ^b   Bais, G ^b   Jabeen, F ^b   Piccin, M ^b   Rubini, S ^b   Martelli, F ^b   Franciosi, A ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; HYDROGEN; HYDROGENATION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN RATE; X RAY DIFFRACTION;

ELECTRONIC ACTIVITY; HYDROGEN NITROGEN COMPLEXES; LATTICE STRAIN; STRAIN REVERSAL;

COMPLEXATION;

EID: 33747124027     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335508     Document Type: Article

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