Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O

Applied Physics Letters

Volumn 88, Issue 10, 2006, Pages

  Felici, Marco ^a   Polimeni, Antonio ^a   Capizzi, Mario ^a   Nabetani, Y ^b   Okuno, T ^b   Aoki, K ^b   Kato, T ^b   Matsumoto, T ^b   Hirai, T ^b  

^a UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; HYDROGEN; IMPURITIES; IRRADIATION; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; TENSILE PROPERTIES;

ATOMIC HYDROGEN IRRADIATION; ISOELECTRONIC IMPURITY; TENSILE STRAIN;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33644910916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2183809     Document Type: Article

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