Quantification of secondary-ion-mass spectroscopy depth profiles using maximum entropy deconvolution with a sample independent response function

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 377-381

  Dowsett, M G ^a   Chu, D P ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FAST FOURIER TRANSFORMS; ION BEAMS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES;

CRATER DEPTH MEASUREMENT; SECONDARY ION MASS SPECTROSCOPY;

SPECTROSCOPY;

EID: 0031702388     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589814     Document Type: Article

References (15)

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2. M. G. Dowsett, N. S. Smith, R. Bridgeland, D. Richards, A. C. Lovejoy, and P. Pedrick, in Secondary Ion Mass Spectrometry SIMS X, edited by A. Benninghoven, B. Hagenhoff, and H. W. Werner (Wiley, Chichester, 1997); N. S. Smith, M. G. Dowsett, B. McGregor, and P. Philips, ibid., p. 363.
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