-
1
-
-
18444399583
-
-
edited by I. A. Buyanova and W. M. Chen (Taylor & Francis Books Inc., New York
-
For a review see: Physics and Applications of Dilute Nitrides, edited by, I. A. Buyanova, and, W. M. Chen, (Taylor & Francis Books Inc., New York, 2004)
-
(2004)
Physics and Applications of Dilute Nitrides
-
-
-
2
-
-
85014169645
-
-
edited by M. Henini (Elsevier, Oxford, UK
-
and Dilute Nitride Semiconductors, edited by, M. Henini, (Elsevier, Oxford, UK, 2005).
-
(2005)
Dilute Nitride Semiconductors
-
-
-
3
-
-
0037101099
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.66.033111
-
T. Kondo, M. Hangyo, S. Yamaguchi, S. Yano, Y. Segawa, and K. Ohtaka, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.033111 66, 033111 (2002).
-
(2002)
Phys. Rev. B
, vol.66
, pp. 033111
-
-
Kondo, T.1
Hangyo, M.2
Yamaguchi, S.3
Yano, S.4
Segawa, Y.5
Ohtaka, K.6
-
4
-
-
0035884111
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.64.115208
-
P. R. C. Kent and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.115208 64, 115208 (2001).
-
(2001)
Phys. Rev. B
, vol.64
, pp. 115208
-
-
Kent, P.R.C.1
Zunger, A.2
-
5
-
-
0001475101
-
-
APPLAB. 0003-6951. 10.1063/1.126671
-
P. J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126671 76, 3439 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 3439
-
-
Klar, P.J.1
Grüning, H.2
Heimbrodt, W.3
Koch, J.4
Höhnsdorf, F.5
Stolz, W.6
Vicente, P.M.A.7
Camassel, J.8
-
6
-
-
0037096543
-
-
PRBMDO. 0163-1829. 10.1103/PhysRevB.65.235325
-
A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.235325 65, 235325 (2002).
-
(2002)
Phys. Rev. B
, vol.65
, pp. 235325
-
-
Polimeni, A.1
Bissiri, M.2
Augieri, A.3
Von Högersthal, G.B.H.4
Capizzi, M.5
Gollub, D.6
Fischer, M.7
Forchel, A.8
-
7
-
-
0038383229
-
-
APPLAB. 0003-6951. 10.1063/1.1586787
-
F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1586787 82, 4474 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 4474
-
-
Masia, F.1
Polimeni, A.2
Von Högersthal, G.B.H.3
Bissiri, M.4
Capizzi, M.5
Klar, P.J.6
Stolz, W.7
-
8
-
-
1542726270
-
-
PRBMDO. 0163-1829. 10.1103/PhysRevB.69.041201
-
A. Polimeni, A. Baldassarri Höger von Högersthal, F. Masia, A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.041201 69, 041201 (R) (2004).
-
(2004)
Phys. Rev. B
, vol.69
, pp. 041201
-
-
Polimeni, A.1
Von Högersthal, A.B.H.2
Masia, F.3
Frova, A.4
Capizzi, M.5
Sanna, S.6
Fiorentini, V.7
Klar, P.J.8
Stolz, W.9
-
9
-
-
33644553124
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.73.073201
-
F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, and W. Stolz, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.073201 73, 073201 (2006).
-
(2006)
Phys. Rev. B
, vol.73
, pp. 073201
-
-
Masia, F.1
Pettinari, G.2
Polimeni, A.3
Felici, M.4
Miriametro, A.5
Capizzi, M.6
Lindsay, A.7
Healy, S.B.8
O'Reilly, E.P.9
Cristofoli, A.10
Bais, G.11
Piccin, M.12
Rubini, S.13
Martelli, F.14
Franciosi, A.15
Klar, P.J.16
Volz, K.17
Stolz, W.18
-
10
-
-
42749108619
-
-
PRBMDO. 0163-1829. 10.1103/PhysRevB.69.245305
-
S. Tomic, E. P. O'Reilly, P. J. Klar, H. Grüning, W. Heimbrodt, W. M. Chen, and I. A. Buyanova, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69. 245305 69, 245305 (2004).
-
(2004)
Phys. Rev. B
, vol.69
, pp. 245305
-
-
Tomic, S.1
O'Reilly, E.P.2
Klar, P.J.3
Grüning, H.4
Heimbrodt, W.5
Chen, W.M.6
Buyanova, I.A.7
-
11
-
-
0001313766
-
-
JAPIAU 0021-8979 10.1063/1.371148
-
W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and Sarah R. Kurtz, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371148 86, 2349 (1999).
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 2349
-
-
Shan, W.1
Walukiewicz, W.2
Ager Iii, J.W.3
Haller, E.E.4
Geisz, J.F.5
Friedman, D.J.6
Olson, J.M.7
Kurtz, R.8
-
12
-
-
19744377544
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.93.196402
-
A. Lindsay and E. P. O'Reilly, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.196402 93, 196402 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.93
, pp. 196402
-
-
Lindsay, A.1
O'Reilly, E.P.2
-
13
-
-
85039014718
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.63.201304
-
A. Polimeni, G. Baldassarri H. v. H., M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.201304 63, 201304 (R) (2001).
-
(2001)
Phys. Rev. B
, vol.63
, pp. 201304
-
-
Polimeni, A.1
Baldassarri, V.H.H.G.2
Bissiri, M.3
Capizzi, M.4
Fischer, M.5
Reinhardt, M.6
Forchel, A.7
-
14
-
-
0035926753
-
-
APPLAB 0003-6951 10.1063/1.1376436
-
G. Baldassarri H. v. H., M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1376436 78, 3472 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 3472
-
-
Baldassarri, V.H.H.G.1
Bissiri, M.2
Polimeni, A.3
Capizzi, M.4
Fischer, M.5
Reinhardt, M.6
Forchel, A.7
-
15
-
-
28744455039
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.71.201301
-
G. Ciatto, F. Boscherini, A. A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71. 201301 71, 201301 (R) (2005).
-
(2005)
Phys. Rev. B
, vol.71
, pp. 201301
-
-
Ciatto, G.1
Boscherini, F.2
Amore Bonapasta, A.A.3
Filippone, F.4
Polimeni, A.5
Capizzi, M.6
-
16
-
-
0000336273
-
-
PRLTAO. 0031-9007. 10.1103/PhysRevLett.74.2315
-
M. Oestreich and W. W. Rühle, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.74.2315 74, 2315 (1995).
-
(1995)
Phys. Rev. Lett.
, vol.74
, pp. 2315
-
-
Oestreich, M.1
Rühle, W.W.2
-
17
-
-
0000028682
-
-
PLRBAQ 0556-2805 10.1103/PhysRevB.18.1794
-
D. Bimberg, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.18.1794 18, 1794 (1978).
-
(1978)
Phys. Rev. B
, vol.18
, pp. 1794
-
-
Bimberg, D.1
-
18
-
-
0001161714
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.56.6889
-
In principle, tensile strain in Ga As1-x Nx grown on GaAs may affect slightly the valence band (and acceptor level) gyromagnetic factor as found in ZnSe:N [W. Heimbrodt, C. L. Orange, D. Wolverson, J. J. Davies, K. Kimura, and T. Yao, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.6889 56, 6889 (1997)].
-
(1997)
Phys. Rev. B
, vol.56
, pp. 6889
-
-
Heimbrodt, W.1
Orange, C.L.2
Wolverson, D.3
Davies, J.J.4
Kimura, K.5
Yao, T.6
-
19
-
-
33845285351
-
-
JAPIAU 0021-8979 10.1063/1.366311
-
In the Ga As1-x Nx GaAs sample with the highest effective N concentration (x=0.6%) among those investigated here, the strain would shift the light-hole component of the carbon level 4 meV above that of the heavy-hole [Ki Soo Kim, Gye Mo Yang, Hyun Wook Shim, Kee Young Lim, Eun-Kyung Suh, and Hyung Jae Lee, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366311 82, 5103 (1997)]. However, under the relatively high temperatures and power densities employed, carrier population of the heavy-hole component is most likely dominant with respect to the light-hole one thanks to its greater density of states (see Ref.).
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 5103
-
-
Soo Kim, K.1
Mo Yang, G.2
Wook Shim, H.3
Young Lim, K.4
Suh, E.5
Jae Lee, H.6
-
20
-
-
0000436825
-
-
PLRBAQ 0556-2805 10.1103/PhysRevB.15.823
-
C. Hermann and C. Weisbuch, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.15.823 15, 823 (1977).
-
(1977)
Phys. Rev. B
, vol.15
, pp. 823
-
-
Hermann, C.1
Weisbuch, C.2
-
21
-
-
36149023996
-
-
PHRVAO 0031-899X 10.1103/PhysRev.114.90
-
Laura M. Roth, Benjamin Lax, and Solomon Zwerdling, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.114.90 114, 90 (1959).
-
(1959)
Phys. Rev.
, vol.114
, pp. 90
-
-
Roth, L.M.1
Lax, B.2
Zwerdling, S.3
-
22
-
-
30244514592
-
-
JPCSAW 0022-3697 10.1016/0022-3697(57)90013-6
-
E. O. Kane, J. Phys. Chem. Solids JPCSAW 0022-3697 10.1016/0022-3697(57) 90013-6 1, 249 (1957).
-
(1957)
J. Phys. Chem. Solids
, vol.1
, pp. 249
-
-
Kane, E.O.1
|