Effect of hydrogen incorporation temperature in in plane-engineered GaAsNGaAsN:H heterostructures

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Trotta, R ^a   Polimeni, A ^a   Capizzi, M ^a   Giubertoni, D ^b   Bersani, M ^b   Bisognin, G ^c   Berti, M ^c   Rubini, S ^d   Martelli, F ^d   Mariucci, L ^e   Francardi, M ^e   Gerardino, A ^e  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b ITC IRST   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d LABORATORIO TASC   (Italy)

^e IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC BORON NITRIDE; DEUTERIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; HYDROGEN; LUMINESCENCE; MASS SPECTROMETRY; NITRIDES; NONMETALS; SECONDARY ION MASS SPECTROMETRY; TECHNOLOGY;

AMERICAN INSTITUTE OF PHYSICS (AIP); BAND GAP ENGINEERING; CONCENTRATION PROFILES; DILUTE NITRIDES; EFFECT OF HYDROGEN; HETEROSTRUCTURES; IN-PLANE (IP); PHOTOLUMINESCENCE (PL); SECONDARY IONS;

LIGHT EMISSION;

EID: 44849133439     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2939000     Document Type: Article

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