Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure

Physical Review Letters

Volumn 98, Issue 14, 2007, Pages

  Pettinari, G ^a   Polimeni, A ^a   Masia, F ^a,d   Trotta, R ^a   Felici, M ^a,e   Capizzi, M ^a   Niebling, T ^b   Stolz, W ^b   Klar, P J ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c JUSTUS LIEBIG UNIVERSITY   (Germany)

^d CARDIFF UNIVERSITY   (United Kingdom)

^e EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; DILUTION; ELECTRONIC PROPERTIES; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

DILUTE NITRIDES; ELECTRON MASS; HYBRIDIZATION; MAGNETOPHOTOLUMINESCENCE;

HYDROSTATIC PRESSURE;

EID: 34047150974     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.146402     Document Type: Article

References (26)

1. For a review, see Physics and Applications of Dilute Nitrides, edited by, I.A. Buyanova, and, W.M. Chen, (Taylor & Francis, New York, 2004);
2. Dilute Nitride Semiconductors, edited by, M. Henini, (Elsevier, Oxford, United Kingdom, 2005).
3. W. Shan, Phys. Rev. Lett. 82, 1221 (1999). PRLTAO 0031-9007 10.1103/PhysRevLett.82.1221
4. F. Masia, Phys. Rev. B PRBMDO 0163-1829 73, 073201 (2006), and references therein. 10.1103/PhysRevB.73.073201
5. A. Lindsay and E.P. O'Reilly, Phys. Rev. Lett. 93, 196402 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.196402
6. G. Pettinari, Phys. Rev. B PRBMDO 0163-1829 74, 245202 (2006). 10.1103/PhysRevB.74.245202
7. J. Endicott, Phys. Rev. Lett. 91, 126802 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.91.126802
8. P.R.C. Kent and A. Zunger, Phys. Rev. Lett. 86, 2613 (2001). PRLTAO 0031-9007 10.1103/PhysRevLett.86.2613
9. Mao-Hua Du, Sukit Limpijumnong, and S.B. Zhang, Phys. Rev. Lett. 97, 075503 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.97.075503
10. J.S. Harris, Jr., Semicond. Sci. Technol. 17, 880 (2002); SSTEET 0268-1242 10.1088/0268-1242/17/8/317
11. H. Riechert, A. Ramakrishnan, and G. Steinle, Semicond. Sci. Technol. 17, 892 (2002). SSTEET 0268-1242 10.1088/0268-1242/17/8/318
12. A. Patanè, Phys. Rev. B PRBMDO 0163-1829 72, 033312 (2005). 10.1103/PhysRevB.72.033312
13. M. Felici, Adv. Mater. 18, 1993 (2006). ADVMEW 0935-9648 10.1002/adma.200600487
14. J. Endicott, Phys. Rev. B PRBMDO 0163-1829 72, 041306 (2005). 10.1103/PhysRevB.72.041306
15. E.D. Jones, Phys. Rev. B PRBMDO 0163-1829 62, 7144 (2000). 10.1103/PhysRevB.62.7144
16. I. Gorczyca, N.E. Christensen, and A. Svane, Solid State Commun. SSCOA4 0038-1098 136, 439 (2005). 10.1016/j.ssc.2005.09.008
17. G.J. Piermarini, J. Appl. Phys. 46, 2774 (1975). JAPIAU 0021-8979 10.1063/1.321957
18. A.R. Goñi, Phys. Rev. B PRBMDO 0163-1829 36, 1581 (1987). 10.1103/PhysRevB.36.1581
19. P.J. Klar, Appl. Phys. Lett. 76, 3439 (2000). APPLAB 0003-6951 10.1063/1.126671
20. B.A. Weinstein, Phys. Rev. B PRBMDO 0163-1829 68, 035336 (2003). 10.1103/PhysRevB.68.035336
21. B.S. Ma, Phys. Rev. B PRBMDO 0163-1829 71, 045213 (2005). 10.1103/PhysRevB.71.045213
22. D. Cabib, E. Fabri, and G. Fiorio, Solid State Commun. SSCOA4 0038-1098 9, 1517 (1971). 10.1016/0038-1098(71)90169-4
23. L.G. Shantharama, J. Phys. C JPSOAW 0022-3719 17, 4429 (1984). 10.1088/0022-3719/17/25/007
24. P. Lefebvre, B. Gil, and H. Mathieu, Phys. Rev. B PRBMDO 0163-1829 35, 5630 (1987). 10.1103/PhysRevB.35.5630
25. T. Taliercio, Phys. Rev. B PRBMDO 0163-1829 69, 073303 (2004). 10.1103/PhysRevB.69.073303
26. E.P. O'Reilly (private communication).