Hafnium silicate nanocrystal memory using sol-gel-spin-coating method

IEEE Electron Device Letters

Volumn 27, Issue 8, 2006, Pages 644-646

  You, Hsin Chiang ^a   Hsu, Tze Hsiang ^a   Ko, Fu Hsiang ^a   Huang, Jiang Wen ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge retention; Endurance; Hafnium silicate; Nanocrystal memory; Sol gel spin coating

Indexed keywords

ANNEALING; HAFNIUM COMPOUNDS; SOL-GELS; SPIN COATING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE RETENTION; HAFNIUM SILICATE NANOCRYSTAL; NANOCRYSTAL MEMORY; RAPID THERMAL ANNEALING (RTA); SOL-GEL SPIN-COATING;

NANOSTRUCTURED MATERIALS;

EID: 33746567929     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.879022     Document Type: Article

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