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Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages

Nonvolatile memory devices with high density ruthenium nanocrystals

(5) Mao, Ping c Zhang, Zhigang a,b Pan, Liyang c Xu, Jun c Chen, Peiyi c

a TSINGHUA UNIVERSITY (China)

b TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY (China)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RUTHENIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS;

GATE STACKS; HIGH DENSITIES; MEMORY WINDOWS; NONVOLATILE MEMORY DEVICES; NONVOLATILE MEMORY TRANSISTORS; OXIDE SEMICONDUCTORS; SMALL SIZES; SPATIAL DISTRIBUTIONS;

DATA STORAGE EQUIPMENT;

EID: 57849159808 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3049598 Document Type: Article

Times cited : (12)

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