PZT MIM capacitor with oxygen-doped Ru-electrodes for embedded FeRAM devices

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2227-2235

  Inoue, Naoya ^a,b   Furutake, Naoya ^b   Toda, Akio ^b   Tada, Munehiro ^b   Hayashi, Yoshihiro ^a,b  

^a IEEE   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Ferroelectric memories; Ferroelectric random access memory (FeRAM); Pb(Zr, Ti)O3 (PZT); Ruthenium (Ru); Sputtering

Indexed keywords

FERROELECTRIC MEMORIES; FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); PB(ZR, TI)O3 (PZT);

CAPACITORS; ELECTRODES; MAGNETRON SPUTTERING; MIM DEVICES; OXYGEN; PEROVSKITE; RANDOM ACCESS STORAGE; RUTHENIUM; SEMICONDUCTOR DOPING;

LEAD COMPOUNDS;

EID: 33947373080     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856793     Document Type: Article

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