Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Xu, Min ^a   Zhang, Chi ^a   Ding, Shi Jin ^a   Lu, Hong Liang ^a   Chen, Wei ^a   Sun, Qing Qing ^a   Zhang, David Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MECHANISMS; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE PHENOMENA;

ATOMIC LAYER DEPOSITION; HIGH PERMITTIVITY; INTERFACIAL LAYER SUPPRESSION; METAL OXIDE GATE DIELECTRICS;

DIELECTRIC DEVICES;

EID: 33845199110     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388044     Document Type: Article

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