Characterization of recessed-gate algan/GaN HEMTs as a function of etch depth

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 478-481

  Anderson, T J ^a   Tadjer, M J ^b   Mastro, M A ^a   Hite, J K ^a   Hobart, K D ^a   Eddy, C R ^a   Kub, F J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

Electroluminescence; GaN; HEMT; ICP etch

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HETEROJUNCTION; DEVICE PERFORMANCE; DIRECT-CURRENT; ETCH DEPTH; GAN HEMTS; HALL MEASUREMENTS; HEMT; ICP ETCH; LOW POWER; ORDER OF MAGNITUDE; PLASMA DAMAGE; PLASMA ETCH; RECESS DEPTH; RECESSED GATE; SHEET CARRIER DENSITIES;

CARRIER MOBILITY; DC POWER TRANSMISSION; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954621179     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1111-x     Document Type: Conference Paper

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