Investigation of three-step epilayer growth approach of GaN films to minimize compensation

Journal of Electronic Materials

Volumn 34, Issue 9, 2005, Pages 1187-1192

  Eddy Jr , C R ^a   Holm, R T ^a   Henry, R L ^a   Culbertson, J C ^a   Twigg, M E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Compensation; Gallium nitride; MOCVD

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHASE TRANSITIONS; SUBSTRATES; THIN FILMS;

COMPENSATION; GALLIUM NITRIDES; MOLAR FLOWS; SAPPHIRE SUBSTRATES;

EPITAXIAL GROWTH;

EID: 25444517664     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0263-6     Document Type: Article

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